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SCR-based ESD protection device with high holding voltage using segment topology for 150V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1047 | 2020-12-04
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SCR-based ESD protection device with high holding voltage using N-drift region for 120V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1046 | 2020-12-04
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NMOSFET-based ESD protection device with improved snapback using gate body floating technology for 100V application in 4H-SiC process
The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).
KU302H1045 | 2020-12-04