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Memory Element > SRAM
  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 3/812 IP Cores
    • 기업 IP
    • N
    • M
    • T

    128Kb Pseudo Dual Port Synchronous SRAM

    SDS2CSRAM_16Kx8 is 131,072-bit Pseudo Dual-Port Synchronous Static Random Access Memory with dual clocks. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static ..

    KC585H0881 | 2017-04-19

    • 기업 IP
    • N
    • M
    • T

    16Mb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 16,777,216-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0876 | 2017-04-09

    • 기업 IP
    • N
    • M
    • T

    128Kb Single-Port Synchronous SRAM

    SPSRAM_16K_X8 is 131,072-bit Single-Port Synchronous Static Random Access Memory. It is organized as 16K words of 8 bits and integrates address, data and control registers. It is designed using 90nm process(HL90LP), SK-Hynix, and memory cell is composed of 6-transistor cells with fully static memory circuitry.

    KC585H0875 | 2017-04-09