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  • 기업 IP
  • 대학·연구소 IP
  • N관련된 신규용역가능
  • M수정/가공 판매가능
  • T기술지원 가능
  • P현 상태로만 판매가능
total: 45/805 IP Cores
    • 대학·연구소 IP
    • P

    SCR-based ESD protection device with high holding voltage using segment topology for 150V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1047 | 2020-12-04

    • 대학·연구소 IP
    • P

    SCR-based ESD protection device with high holding voltage using N-drift region for 120V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1046 | 2020-12-04

    • 대학·연구소 IP
    • P

    NMOSFET-based ESD protection device with improved snapback using gate body floating technology for 100V application in 4H-SiC process

    The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pulse generator : it can generate the HBM, MM).

    KU302H1045 | 2020-12-04

    • 대학·연구소 IP
    • T

    A Gate-Body Floating NMOSFET with high holding voltage for High voltage esd protection in 0.18 Hynix BCD Process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1039 | 2020-08-04

    • 대학·연구소 IP
    • T

    A SCR based ESD Protection device with Dual-Directional using N-bridge region in 0.18 hynix process

    ESD protection circuit with SK Hynix 0.18um BCD process for power clamp. The circuit has effective ESD performance by using SCR based Device. Also, the circuit has latch-up immunity as well as small area. The Electrical characteristics of ESD protection circuit are verified by using TLP system and ESD simulator (ESD pu..

    KU302H1038 | 2020-08-04